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| K814P/ K824P/ K844P Vishay Semiconductors Optocoupler with Phototransistor Output Description The K814P/ K824P/ K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes (reversed polarity) in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Feature phones, answering machines, PABX, fax machines Coll. Emitter 14925 Features D Endstackable to 2.54 mm (0.1') spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) of typical 100% D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Anode Cath. 4 PIN 8 PIN 16 PIN D CSA (C-UL) 1577 recognized, file number E-76222 - Double Protection D Coupling System U C Order Instruction Ordering Code K814P K824P K844P CTR Ranking < 20% < 20% < 20% Remarks 4 Pin Single channel 8 Pin Dual channel 16 Pin Quad channel Rev. A4, 11-Jan-99 1 (9) 13947 K814P/ K824P/ K844P Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter Test Conditions AC Isolation test voltage (RMS) t = 1 min Total power dissipation Tamb 25C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 5 250 -40 to +100 -55 to +125 260 Unit kV mW C C C 2 (9) Rev. A4, 11-Jan-99 K814P/ K824P/ K844P Vishay Semiconductors Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Reverse current Test Conditions IF = 50 mA VR = 6 V Symbol VF IR Min. Typ. 1.25 Max. 1.6 10 Unit V mA Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA 100 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF W 100 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA Type Symbol CTR Min. 0.2 Typ. Max. 3.0 Unit Rev. A4, 11-Jan-99 3 (9) K814P/ K824P/ K844P Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 ( (see figure 1) g ) W VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 2) g ) Symbol td tr tf ts ton toff ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Unit ms ms ms ms ms ms ms ms 0 RG = 50W tp T = 0.01 tp = 50 IF IF +5V IC = 2 mA ; adjusted through input amplitude 96 11698 ms Channel I Oscilloscope RL > 1 MW CL < 20 pF IF 0 tp IC 100% 90% t 50 13343 W 100 W Channel II Figure 1. Test circuit, non-saturated operation 0 RG = 50 tp T = 0.01 tp = 50 IF IF = 10 mA +5V IC 10% 0 tr td ton ts toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) tf W ms t Channel I Channel II 1 kW Oscilloscope RL > 1 MW CL < 20 pF 50 13344 W tp td tr ton (= td + tr) storage time fall time turn-off time Figure 2. Test circuit, saturated operation Figure 3. Switching times 4 (9) Rev. A4, 11-Jan-99 K814P/ K824P/ K844P Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000 150 IR-diode 100 50 0 0 40 80 120 100 10 1 0 95 11026 25 50 75 100 96 11700 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature 1000.0 IC - Collector Current ( mA ) Figure 7. Collector Dark Current vs. Ambient Temperature 100 VCE=5V 10 I F - Forward Current ( mA ) 100.0 10.0 1 1.0 0.1 0.1 0 96 11862 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 95 11027 0.1 1 10 100 IF - Forward Current ( mA ) Figure 5. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 2.0 Figure 8. Collector Current vs. Forward Current 100 IC - Collector Current ( mA ) VCE=5V IF=5mA 1.5 20mA IF=50mA 10 10mA 5mA 1.0 1 2mA 1mA 0.5 0 -25 95 11025 0.1 0 25 50 75 95 10985 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Collector Emitter Voltage Rev. A4, 11-Jan-99 5 (9) K814P/ K824P/ K844P Vishay Semiconductors V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 20% 0.8 CTR=50% 0.6 50 Saturated Operation VS=5V RL=1kW t on / t off - Turn on / Turn off Time ( m s ) 40 30 toff 20 10 0 ton 0 5 10 15 20 0.4 0.2 0 1 10 IC - Collector Current ( mA ) 100 10% 95 11028 95 11031 IF - Forward Current ( mA ) Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 1000 CTR - Current Transfer Ratio ( % ) VCE=5V 100 Figure 12. Turn on / off Time vs. Forward Current t on / t off - Turn on / Turn off Time ( s ) 10 Non Saturated Operation VS=5V RL=100W m 8 ton 6 toff 4 2 0 10 1 0.1 95 11029 1 10 100 95 11030 0 2 4 6 10 IF - Forward Current ( mA ) IC - Collector Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current Pin 1 Indication Type Figure 13. Turn on / off Time vs. Collector Current K814P 820UTK63 15083 Date Code (YM) Company Production Coupling Logo Location System Indicator Figure 14. Marking example 6 (9) Rev. A4, 11-Jan-99 K814P/ K824P/ K844P Vishay Semiconductors Dimensions of K814P in mm weight: ca. 0.25 g creepage distance:y 6 mm air path: 6 mm y after mounting on PC board 14789 Dimensions of K824P in mm weight: ca. 0.55 g creepage distance:y 6 mm air path: 6 mm y after mounting on PC board 14784 Rev. A4, 11-Jan-99 7 (9) 14784 K814P/ K824P/ K844P Vishay Semiconductors Dimensions of K844P in mm weight: ca. 1.0 g creepage distance:y 6 mm air path: 6 mm y after mounting on PC board 14783 8 (9) Rev. A4, 11-Jan-99 K814P/ K824P/ K844P Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A4, 11-Jan-99 9 (9) This datasheet has been download from: www..com Datasheets for electronics components. |
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